Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... View More
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... View More
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GaAs Epi Wafer
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18mm GaAs Si Wafer 2inch GaAs Undoped Substrates VGF S-C-N
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:18mm GaAs Si Wafer, GaAs Undoped Substrates VGF, GaAs Si Wafer 2inch
2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others. Gallium arsenide (chemical formula GaAs) is a semiconductor compound used in some d... View More
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JDCD05-001-003 10*10mm2*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
10*10mm2*0.3mm electronic grade single crystal diamond,N content View More
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Boost Production Rapid Thermal Processing RTP-SA-8 Annealing System
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3 month
Brand: Ganova
High Light:Boost Production Rapid Thermal Processing, Rapid Thermal Processing Annealing System
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... View More
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Hall Coefficient Hall Effect Sensor Tester Mobility Resistivity Measurement
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Brand: GaNova
High Light:Hall Effect Sensor Tester Mobility Resistivity, carrier concentration hall effect instrument, Hall Effect Sensor Tester semiconductor
Hall Coefficient Hall Effect Sensor Tester mobility resistivity measurement Product Overview: Hall effect tester is used to measure the carrier concentration, mobility, resistivity, Hall coefficient and other important parameters, and these parameters of semiconductor materials to understand the ele... View More
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ALN 10*10mm2 AlN Single Crystal 400±50μM S/P/R Grade
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: GaNova
High Light:ALN aluminum nitride wafer, 2H aluminum nitride wafer, 10*10mm2 aln wafer
AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength , abrasion resistance and small dielectric loss . The surface of AlN substrate is quite smooth and low porosity . Aluminium Nitride has higher thermal conductivity , compared to al... View More
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Laser Diode Chip
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94um Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Brand: GaNova
High Light:94um Laser Diode Chip, high power laser diode chip, 1.0W/A Laser Diode Chip
94μm Laser Diode Chip Slope Efficiency 1.0W/A Wavelength 915nm 915nm 10W COS Diode Laser Chip On Submount Design For low power consumption it is essential that the output from the laser diode (LD) is efficiently coupled to the optical waveguide, and there are several approaches reported in the liter... View More
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
High Light:100.0mm Silicon Carbide Crystal, single crystal sic 4", Silicon Carbide Crystal 18.0mm
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows ... View More
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Ga2O3 Wafer
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Sn Doping Ga2O3 Wafer Single Crystal Substrate 10x10mm2
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Sn Doping Ga2O3 Wafer, 0.8mm Gallium Oxide wafer, Ga2O3 Wafer 10x10mm2
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating layers of semiconductor materials, and UV filters Among these different phases of Ga2O3, the orthorhombic β-gallia stru... View More
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Silicon Wafer
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JDCD07-001-001 4-Inch SOI Epitaxial Wafer For MEMS Processing
Price: Negotiable
MOQ: 1
Delivery Time: 3-4 week days
Brand: GaNova
4-Inch SOI Epitaxial Wafer For MEMS Processing Overview Although silicon crystals may look metallic, they are not entirely metals. Due to the "free electrons" that move easily between atoms, metals are good conductors of electricity, and electricity is the movement of electrons. A pure sil... View More
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Sapphire Wafer
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JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... View More
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Patterned Sapphire Crystal Wafer 2inch Sapphire Substrate
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: GaNova
High Light:Patterned sapphire crystal wafer, 2inch Sapphire Substrate, Al203 sapphire crystal wafer
A-Plane±0.2o Patterned Sapphire Substrates BOW≤-8~0μM Back Surface Roughness 0.8~1.2μm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The regular patterns created on the sapphire substrate counteracts the effect of the total internal reflection at the GaN/sapphire interface. And, th... View More
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Wafer Holder
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6inch Wafer Holder Cleaning Flower Baskets And Handles
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
High Light:6inch Wafer Holder, wafer cassette carrier, 25 PCS Wafer Holder
6inch Wafer Holder Cleaning Flower Baskets And Handles PFA Cassette / Cassette of wafer can be customized and designed by customers’ request, able to resist strong acid, strong hydrofluoric acid, strong base and heat up to 200~220℃, use to deliver wafers in acid & base process of Fabrication f... View More
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8 inch Wafer Dicing Machine X Axis Cutting Range 260mm 1.8 KW 2.2 KW
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Brand: GaNova
High Light:8 inch Wafer Dicing Machine, wafer cutting machine 260mm, Wafer Dicing Machine X Axis
DAD3350 Wafer Dicing Machine X-Axis Cutting Range 260mm 1.8 KW, 2.2 KW Process quality By adopting a high-rigidity bridge-type frame and a spindle front-section support structure, which prevents heat shrinkage and vibration, a more stable processing point can be achieved. Process controls Auto align... View More
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